A 2 × Voltage Generator Analytical Model

Since portable systems and processing power applications demand efficient power consumption, this paper deals with the development of an analytical model based on the on-resistance effect of MOS switches to design a silicon-based charge-pump voltage generator (VG). This model that is developed for adding design parameters under the designer’s control is a useful design tool to quickly estimate the VG’s performance in the time domain. Numerical results are compared with transistor-level simulation to validate not only the analytical model, but also to estimate the integration area of a silicon-based VG. It was found that an onresistance ranging from zero to 50 Ω presents a relative error of 2%. Experimental results show the usefulness of the proposed design model.